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JORGE ANDRES GUERRA TORRES

JORGE ANDRES GUERRA TORRES

JORGE ANDRES GUERRA TORRES

Doctor en Física, PONTIFICIA UNIVERSIDAD CATOLICA DEL PERU

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Magíster en Física (PONTIFICIA UNIVERSIDAD CATOLICA DEL PERU)

DOCENTE ORDINARIO - PRINCIPAL
Docente a tiempo completo (DTC)
Departamento Académico de Ciencias - Sección Física

Publicaciones

Se encontraron 63 publicaciones

MEJIA, M. D. C.; SANCHEZ, L. F.; Kurniawan, M.; Eggert, L.; TEJADA, A.; CAMARGO, M. K.; GRIESELER, R.; RUMICHE, F. A.; DIAZ, M. I.; Bund, A.; GUERRA, J. A.(2021). Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting. Journal of Physics D: Applied Physics. (pp. 195101). Recuperado de: https://iopscience.iop.org/article/10.1088/1361-6463/abdb69
GUERRA, J. A.(2016). Analytical study of the thermal activation of Tb doped amorphous SiC:H thin films. MRS Advances. Volumen: 1. (pp. 2689 - 2694). Recuperado de: https://www.cambridge.org/core/journals/mrs-advances/article/analytical-study-of-the-thermal-activation-of-tb-doped-amorphous-sich-thin-films/6A6DBBAE
TREVEJO, J. N.; BRAVO, F.; PEREZ, E. A.; ENRIQUE, L. A.; PIÑEIRO, M.; LLONTOP, P. D.; SUN, M. D. R.; GUERRA, J. A.(2023). Annealing treatment effects on the optical and electrical properties of Al-doped zinc oxide thin films. En MATERIALS FOR SUSTAINABLE DEVELOPMENT CONFERENCE (MATSUS). VALENCIA. nanoGe. Recuperado de: https://www.nanoge.org/proceedings/MATSUSFall23/649b51837a82c207f6449fcf
GUERRA, J. A.; TEJADA, A.; PALOMINO TOFFLINGER, J.; GRIESELER, R.; Korte, L.(2019). Band-fluctuations model for the fundamental absorption of crystalline and amorphous semiconductors: a dimensionless joint density of states analysis. Journal of Physics D: Applied Physics. Volumen: 52. Recuperado de: https://iopscience.iop.org/article/10.1088/1361-6463/aaf963
GUERRA, J. A.(2016). Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide. MRS Advances. Volumen: 1. (pp. 2929 - 2934). Recuperado de: https://www.cambridge.org/core/journals/mrs-advances/article/bandgap-engineering-of-amorphous-hydrogenated-silicon-carbide/37D9BA072EC02E3825C436D35D6
MEJIA, M. D. C.; SANCHEZ, L. F.; RUMICHE, F. A.; GUERRA, J. A.(2021). Bandgap engineering of hydrogenated a-SiC:H thin films for photoelectrochemical water splitting applications. Journal of Physics D: Applied Physics. Volumen: 54. (pp. 85108). Recuperado de: https://doi.org/10.1088/1361-6463/abc77a
WEINGÄRTNER, R.; GUERRA, J. A.; Erlenbach, O.; GÁLVEZ, G. A. F.; DE ZELA, F. A.; Winnacker, A.(2010). Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1-x(AlN)x doped with terbium and its optical emission properties. Materials science and engineering. Volumen: 174. (pp. 114 - 118). Recuperado de: http://
SEVILLANO, M. A.; DULANTO, J. A.; CONDE, L. A.; GRIESELER, R.; GUERRA, J. A.; PALOMINO TOFFLINGER, J.(2020). Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon. Journal of Physics: Conference Series. Recuperado de: https://iopscience.iop.org/article/10.1088/1742-6596/1433/1/012007