WEINGÄRTNER, R.;
GUERRA, J. A.; Erlenbach, O.;
GÁLVEZ, G. A. F.;
DE ZELA, F. A.; Winnacker, A.(2010).
Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1-x(AlN)x doped with terbium and its optical emission properties. Materials science and engineering. Volumen: 174. (pp. 114 - 118). Recuperado de:
http://GUERRA, J. A.; MONTAÑEZ, L. M.; Erlenbach, O.(2010).
Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films. En
International Conference on Silicon Carbide and Related Materials. (pp. 263 - 266). MSF. Recuperado de:
http://www.scientific.net/MSF.645-648.263 GÁLVEZ, G. A. F.; Erlenbach, O.;
GUERRA, J. A.; WEINGÄRTNER, R.(2010).
Quality control and electrical properties of thin amorphous (SiC) 1-x(AlN)x films produced by radio frequency dual magnetron sputtering. En
13th International Conference on Silicon Carbide and Related Materials 2009. Trans Tech Publications. Recuperado de:
https://www.scientific.net/MSF.645-648.1199 Erlenbach, O.;
GUERRA, J. A.; WEINGÄRTNER, R.(2010).
Thermal activation and cathodoluminescence measurements of Tb3+ doped a-(SiC)1-x(AlN)x thin films. En
International Conference on Silicon Carbide and Related Materials. MSF. Recuperado de:
http://www.scientific.net/MSF.645-648.459