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GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

Magíster en Física, PONTIFICIA UNIVERSIDAD CATOLICA DEL PERU

Licenciado en Física
DOCENTE ORDINARIO - ASOCIADO
Docente a tiempo completo (DTC)
Departamento Académico de Ciencias - Sección Física

Publicaciones

Se encontraron 20 publicaciones

GÁLVEZ, G. A. F. J.(2011). Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering. Journal of Physics: Conference Series. Volumen: 274. (pp. 12113 - 12116). Recuperado de: http://dx.doi.org/10.1088/1742-6596/274/1/012113
GUERRA, J. A.; MONTAÑEZ, L. M.; ERLENBACH, O.; GÁLVEZ, G. A. F.; DE ZELA, F. A.; ALBRECHT, W.; WEINGÄRTNER, R.(2011). Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering. Journal of Physics. Volumen: 274. (pp. 1 - 7). Recuperado de: http://dx.doi.org/10.1088/1742-6596/274/1/012113
GÁLVEZ, G. A. F. J.(2011). Advances in optical technologies at Pontificia Universidad Catolica del Peru. En International Conference on Applications of Optics and Photonics, Braga-Portugal. (pp. 1 - 6). SPIE. Recuperado de: http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1264158
GÁLVEZ, G. A. F. J.(2010). Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1-x(AlN)x doped with terbium and its optical emission properties. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. Volumen: 174. (pp. 114 - 118). Recuperado de: http://dx.doi.org/10.1016/j.mseb.2010.03.033
GALVEZ, G. A. F. J.(2010). Determination of the optical bandgap of thin amorphous (SiC)1-x(AlN)x films. Materials Science Forum Vols. Volumen: 645. (pp. 263 - 266).
GÁLVEZ, G. A. F. J.(2010). Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements. Materials Science and Engineering B: Solid-State Materials for Advanced Technology . Volumen: 174. (pp. 127 - 131). Recuperado de: http://dx.doi.org/10.1016/j.mseb.2010.03.012
GALVEZ, G. A. F. J.(2010). Quality control and electrical properties of thin amorphous (SiC)1-x(AlN)x films produced by radio frequency dual magnetron sputtering. Materials Science Forum Vols. Volumen: 645. (pp. 1199 - 1202).
GALVEZ, G. A. F. J.(2010). Thermal activation and cathodoluminescence measurements of Tb3+-doped a-(SiC)1-x(AlN)x thin films. Materials Science Forum Vols. Volumen: 645. (pp. 459 - 462).