GÁLVEZ, G. A. F. J.(2010).
Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements. Materials Science and Engineering B: Solid-State Materials for Advanced Technology . Volumen: 174. (pp. 127 - 131). Recuperado de:
http://dx.doi.org/10.1016/j.mseb.2010.03.012 GALVEZ, G. A. F. J.(2010).
Thermal activation and cathodoluminescence measurements of Tb3+-doped a-(SiC)1-x(AlN)x thin films. Materials Science Forum Vols. Volumen: 645. (pp. 459 - 462).
GALVEZ, G. A. F. J.(2010).
Quality control and electrical properties of thin amorphous (SiC)1-x(AlN)x films produced by radio frequency dual magnetron sputtering. Materials Science Forum Vols. Volumen: 645. (pp. 1199 - 1202).
GÁLVEZ, G. A. F.; Erlenbach, O.;
GUERRA, J. A.; WEINGÄRTNER, R.(2010).
Quality control and electrical properties of thin amorphous (SiC) 1-x(AlN)x films produced by radio frequency dual magnetron sputtering. En
13th International Conference on Silicon Carbide and Related Materials 2009. Trans Tech Publications. Recuperado de:
https://www.scientific.net/MSF.645-648.1199 GALVEZ, G. A. F. J.(2010).
Determination of the optical bandgap of thin amorphous (SiC)1-x(AlN)x films. Materials Science Forum Vols. Volumen: 645. (pp. 263 - 266).