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GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

GONZALO ALVARO FRANCISCO JAVIER GALVEZ DE LA PUENTE

Magíster en Física, PONTIFICIA UNIVERSIDAD CATOLICA DEL PERU

Licenciado en Física
DOCENTE ORDINARIO - ASOCIADO
Docente a tiempo completo (DTC)
Departamento Académico de Ciencias - Sección Física

Publicaciones

Se encontraron 33 publicaciones

GÁLVEZ, G. A. F. J.(2011). Advances in optical technologies at Pontificia Universidad Catolica del Peru. En International Conference on Applications of Optics and Photonics, Braga-Portugal. (pp. 1 - 6). SPIE. Recuperado de: http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1264158
GÁLVEZ, G. A. F. J.(2011). Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering. Journal of Physics: Conference Series. Volumen: 274. (pp. 12113 - 12116). Recuperado de: http://dx.doi.org/10.1088/1742-6596/274/1/012113
WEINGÄRTNER, R.; ERLENBACH, O. K. O.; GALVEZ, G. A. F. J.; DE ZELA, F. A.; Winnacker, A.; Zitzlsberger, S.(2011). Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering. Journal of Physics: Conference Series. Recuperado de: http://iopscience.iop.org/1742-6596/274/1/012113
GUERRA, J. A.; MONTAÑEZ, L. M.; ERLENBACH, O.; GÁLVEZ, G. A. F.; DE ZELA, F. A.; ALBRECHT, W.; WEINGÄRTNER, R.(2011). Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering. Journal of Physics. Volumen: 274. (pp. 1 - 7). Recuperado de: http://dx.doi.org/10.1088/1742-6596/274/1/012113
GÁLVEZ, G. A. F. J.(2011). Emission pattern of an aluminium nitride target for radio frequency magnetron sputtering. Journal of Physics: Conference Series. Volumen: 274. (pp. 12116 - 12120). Recuperado de: http://dx.doi.org/10.1088/1742-6596/274/1/012116
WEINGÄRTNER, R.; GUERRA, J. A.; Erlenbach, O.; GÁLVEZ, G. A. F.; DE ZELA, F. A.; Winnacker, A.(2010). Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1-x(AlN)x doped with terbium and its optical emission properties. Materials science and engineering. Volumen: 174. (pp. 114 - 118). Recuperado de: http://
GÁLVEZ, G. A. F. J.(2010). Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1-x(AlN)x doped with terbium and its optical emission properties. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. Volumen: 174. (pp. 114 - 118). Recuperado de: http://dx.doi.org/10.1016/j.mseb.2010.03.033
GALVEZ, G. A. F. J.(2010). Determination of the optical bandgap of thin amorphous (SiC)1-x(AlN)x films. Materials Science Forum Vols. Volumen: 645. (pp. 263 - 266).