JAN AMARU PALOMINO TOFFLINGER

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Artículos en memoria o anales de congreso (5)Artículos en revista (57)Tesis (1)

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Se encontraron 63 publicaciones

TUCTO, K. Y.; FLORES, L. F.; GUERRA, J. A.; PALOMINO TOFFLINGER, J.; DULANTO, J. A.; GRIESELER, R.; Osvet, A.; Batentschuk, M.; WEINGÄRTNER, R.(2017). Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells. MRS Advances. Volumen: 2. (pp. 2989 - 2995). Recuperado de: https://www.cambridge.org/core/journals/mrs-advances/article/production-and-characterization-of-tb3yb3-coactivated-alon-thin-films-for-down-conversion

GUERRA, J. A.; TUCTO, K. Y.; MONTAÑEZ, L. M.; DE ZELA, F. A.; PALOMINO TOFFLINGER, J.; Winnaker, A.; WEINGÄRTNER, R.(2016). Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films. MRS Advances. Volumen: 1. (pp. 2689 - 2694). Recuperado de: https://www.cambridge.org/core/journals/mrs-advances/article/analytical-study-of-the-thermal-activation-of-tb-doped-amorphous-sich-thin-films/6A6DBBAE

GUERRA, J. A.; MONTAÑEZ, L. M.; TUCTO, K. Y.; ANGULO, J. R.; PALOMINO TOFFLINGER, J.; Winnaker, A.; WEINGÄRTNER, R.(2016). Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide. MRS Advances. Volumen: 1. (pp. 2929 - 2934). Recuperado de: https://www.cambridge.org/core/journals/mrs-advances/article/bandgap-engineering-of-amorphous-hydrogenated-silicon-carbide/37D9BA072EC02E3825C436D35D6

GUERRA, J. A.; DE ZELA, F. A.; TUCTO, K. Y.; MONTAÑEZ, L. M.; PALOMINO TOFFLINGER, J.; Winnacker, A.; WEINGÄRTNER, R.(2016). Effect of thermal annealing treatments on the optical activation of Tb3+-doped amorphous SiC:H thin films. Journal of Physics D: Applied Physics. Volumen: 49. Recuperado de: https://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=53&SID=3CJcIfrx5rYPSA8rD3t&page=1&doc=1

Preissler, N.; PALOMINO TOFFLINGER, J.; Shutsko, I.; Gabriel, O.; Calnan, S.; Stannowski, B.; Rech, B.; Schlatmann, R.(2016). Interface passivation of liquid-phase crystallized silicon on glass studied with high-frequency capacitance-voltage measurements. Physica Status Solidi (A) Applications and Materials Science. Volumen: 213. (pp. 1697 - 1704). Recuperado de: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532957/abstract

GUERRA, J. A.; ANGULO, J. R.; GOMEZ, S. M.; LLAMOZA, J. A.; MONTAÑEZ, L. M.; TEJADA, A.; PALOMINO TOFFLINGER, J.; Winnacker, A.; WEINGÄRTNER, R.(2016). The Urbach focus and optical properties of amorphous hydrogenated SiC thin films. Journal of Physics D: Applied Physics. Volumen: 49. Recuperado de: http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=4CG8cHbQv6Eq8riJ6Qj&page=1&doc=1

PALOMINO TOFFLINGER, J.; Laades, A.; Korte, L.; Leendertz, C.; MONTAÑEZ, L. M.; Stürzebecher, U.; Sperlich, H.; Rech, B.(2015). PECVD-AlOx/SiNx passivation stacks on wet chemically oxidized silicon: Constant voltage stress investigations of charge dynamics and interface defect states. Solar Energy Materials and Solar Cells. Volumen: 135. (pp. 49 - 56). Recuperado de: http://www.sciencedirect.com/science/article/pii/S0927024814005066

Lu, W.; Leendertz, C.; Korte, L.; PALOMINO TOFFLINGER, J.; Angermann, H.(2014). Passivation Properties of Subnanometer Thin Interfacial Silicon Oxide Films. Energy Procedia. Volumen: 55. (pp. 805 - 812). Recuperado de: http://www.sciencedirect.com/science/article/pii/S1876610214012879